| 摘要 |
PURPOSE:To prevent the film quality from deteriorating or any filming material from remaining due to the effect of an etchant on a transparent conductive material such as ITO etc. or photoelectric conversion film by a method wherein a transparent electrode is formed on a light transmissive insulating substrate by photoetching process and after forming a photoelectric conversion film, an opposing metallic electrode is formed by lift-off process. CONSTITUTION:ITO is evaporated on a transparent glass substrate 10 and then an individual electrode 6 with an electrode 61 and a wiring 62 is formed by photoetching process. Firstly a Cr film 4 and an Ni film 12 are laminated utilizing a mask covering a part of the electrode 61 and the wiring 62 to form the Cr/Ni film. Secondly the electrode 61 and the wiring 62 of ITO individual electrode are covered with resist 13 to be developed. Ni and Cr are etched at the part not covered with the resist 13 to form a wiring pattern and then the resist 13 is removed. Thirdly the electrode 61 is covered with an a-Si layer 5 as a mask to be formed in the order of P, I and N layers as photoelectric conversion film and then the surface is coated with the resist 13 leaving a window 14. Finally an Al film 15 and a Ti film 16 are successively mask-evaporated on the window 14 and the periphery thereof and then the Al film 15 and the Ti film 16 on the resist 13 are removed. |
