| 摘要 |
PURPOSE:To enable to form a microscopic pattern by performing a simple method without giving damage on a semiconductor substrate by a method wherein an etching is performed by projecting an excimer laser on the first layer resist using the second layer resist, on which a patterning is performed at first, as a mask using a double-layer resist structure. CONSTITUTION:PMMA resin is coated on a semiconductor substrate 1 in the thickness of 0.5-2.0mum as the first layer resist 2, and the substrate is heated at 170 deg.C for 20min. Then, a substrate structure 1a with double layer resist is formed by coating the CMS resin having an electron beam negative resist property on the first resist 2 in the thickness of 0.2-0.3mum and then heating the above at the temperature range of 110-120 deg.C for 25min. Subsequently, an electron beam 4 is made to irradiate on the prescribed pattern located on the second layer resist 3, and a developing process is performed using the prescribed developing solution. An ArF excimer laser 5 is made to irradiate on the PMMA resist 2 which is the first layer resist using the patterned second layer resists 3', 3'', and 3'''... as a mask, and an etching is performed on the first layer resist 2 on which a heat-insulating photo-decomposition is performed. |
