| 摘要 |
PURPOSE:To enable the electrical activation of an ion-implanted region at high temperature in a short time and the uniformity of the seat resistance in a semiconductor substrate, by a method wherein ion implantation is performed to the substrate surface, and the ion-implanted region is activated by heating on irradiation with infrared lamp rays from both main surfaces of the substrate. CONSTITUTION:After ion implantation to the surface of a semiconductor sub strate, the ion-implanted region is activated by heating on irradiation with infrared lamp rays having a continuous wavelength distribution in a range of 0.4-4.0mum from both surfaces of the substrate by using an infrared lamp. Annealing by this infrared lamp ray irradiation can contrive the electrical activation of the ion-implanted region in a short annealing time of 1/10-1/100 of the conventional time of electric furnace annealing, and can solve the conven tional problems resulting from long-time annealing. Besides, because of several seconds of irradiation with infrared lamp rays, irradiation only from one surface is liable to cause crystal defects due to stress by the generation of thermal distortion in the substrate. Since this invention includes irradiation from both main surfaces of the substrate, thermal distortion and crystal defects do not generate. |
