| 发明名称 |
METHOD OF DICING A SEMICONDUCTOR WAFER |
| 摘要 |
<p>A method of dicing a semiconductor wafer in which a physical discontinuity is formed on the surface of the wafer on both sides of a dicing line to limit the spreading of cracks and chips generated during dicing. Thereafter, the semiconductor wafer is diced to separate the pellets.</p> |
| 申请公布号 |
EP0032801(B1) |
申请公布日期 |
1986.09.03 |
| 申请号 |
EP19810300122 |
申请日期 |
1981.01.13 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
ABE, MASAHIRO;MIYAGAWA, MASAFUMI;NAKAMURA, HATSUO;YONEZAWA, TOSHIO |
| 分类号 |
H01L21/301;H01L21/304;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/301 |
| 代理机构 |
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代理人 |
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| 主权项 |
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