Method of making three dimensional semiconductor devices in selectively laser regrown polysilicon or amorphous silicon layers

摘要

Herein disclosed is a semiconductor device having at least one lower resistance region formed in the single-crystalline semiconductor film which is so formed to continuously coat both a single-crystalline semiconductor substrate and an insulating film formed on the surface of the substrate. Since the aforementioned single-crystalline semiconductor film is used, many advantages which are not attained from the semiconductor device according to the prior art can be obtained. The aforementioned single-crystalline semiconductor film is formed by irradiating a polycrystalline or amorphous semiconductor film with a laser beam.