| 摘要 |
PURPOSE:To eliminate strikingly the damage to be subjected to at the time of assembly of a semiconductor device and to contrive to enable the manufacturing yield of the high-quality semiconductor device to uphold by a method wherein a protective film is provided on a part of the device, which abuts on the pickup part of the bonder. CONSTITUTION:A protective film 14, which is provided on the peripheral part of aparts of a chip, is provided within the region shown by oblique lines in the diagram. The material for the protective film 14 must be one, which does not exert an electrical and chemical effect on the semiconductor element, and at the same time, must be such one as to enable an external force to be applied to the main body of the semiconductor element to relax when the external force acts on the semiconductor device. It is desirable that the material should be one whereto a means of fine processing technique is adaptable, such as one having a photosensitivity to light and such as one to sense to an electron beam from the viewpoint of the formation of the protective film. In the semiconductor device constituted with the protective film of a thickness of about 1-2mum, the generation of a crack, a break and so forth is not recognized whatever in the GaAs substrate 11 of the hall element even though a die-bonding operation is conducted. |
