| 摘要 |
PURPOSE:To contrive improvement in productivity of the title semiconductor device without lowering the yield of production and reliability of the device by a method wherein an organic thin film which transmits a laser beam is formed on a semiconductor substrate, and the pattern for recognition is formed on the semiconductor substrate by projecting a laser beam from above the organic thin film. CONSTITUTION:A PEG film 2 is formed on a silicon wafer 1, and when a recog nition pattern is formed on the prescribed part of the silicon wafer 1 by project ing a laser beam 3, the part of the silicon wafer 1 where the laser beam 3 is projected is momentarily fused and scattered by evaporation. As the PEG film 2, wherein the scattering substance of the silicon wafer 1 is contained, is solidified in the deformed state when the projection of the laser beam is stopped, the groove 5 of recognition pattern is formed on the surface of the silicon wafer 1 by removing the PEG film by rinsing. According to this method, no scattering substance is adhered to the wafer surface, and the recognition pattern having the contrast required for an automatic recognition can be formed, thereby enabling to improve the yield of production of the semiconductor device. |
