SEMICONDUCTOR DEVICE MATERIAL AND MANUFACTURE OF SEMICONDUCTOR DEVICE USING THE MATERIAL

摘要

PURPOSE:To enable to partially change a transfer circuit in less processes while utilizing the original circuit of photo mask as it is by a method wherein light shielding films are laid between multiple layered resist while a posiresist with sensitive region to both electron beam and ultraviolet rays is utilized as the resist of the first layer to be left to the last. CONSTITUTION:Additional circuit patterns are image-drawn on a negative resist 5 by means of an electron beam exposure device. Then not yet exposed parts 5b are resolved by development and then light shielding films 4 are etched utilizing exposed parts 5a as masks to leave themselves on the transfer parts only of additional circuit. After removing any needless resists 5a, patterns of original circuit 8 are printed on a posiresist 3 by ultraviolet ray irradiation utilizing a photomask 6 and the light shielding films 4 as masks. The posiresist 3 is divided into three parts i.e. the original circuit, not yet exposed parts 3a whereon additional circuit patterns are image-drawn and exposed parts 3b not to be a circuit. Later patterns A represented by chain lines are erased from the transfer part of original circuit to form a resist circuit with the other pattern B added thereto by means of exposing and developing the erased circuit 3c utilizing the electron beam exposure device. Finally the residual light shielding films 4 are removed.