| 摘要 |
PURPOSE:To obtain an MISFET having excellent response characteristics by a method wherein source and drain regions are formed using a doped polycrystalline Si ayer as the source of diffusion, and a gate electrode is provided on the surface pinched between said polycrystalline Si layers through the intermediary of an insulating film, and the polycrystalline Si layers are utilized as a contact electrode for the source and the drain regions. CONSTITUTION:A polycrystalline silicon film 7, having arsenic density in solubility limit against silicon, is deposited in the thickness of 5mum or thereabout on a P type silicon substrate 1 by performing a vapor-phase growing method, and after said film 7 located on the area other than the active layer of the transistor has been removed by etching, a field oxide film 6 is coated thereon. A gate part window is provided on the film 6, and a plasma etching is performed on the film 7 using the film 6 as a mask. Then, the surface of the substrate 1 is oxidized, an oxide film 8 of 500Angstrom is grown on the surface of the substrate 1, an oxide film 8 of 1,000Angstrom is grown on the side face of the film 7, and N type conductive layers 2 and 3 of approximately 0.15mum in depth are formed by diffusing As in the internal part of the substrate 1 located directly below the film 7. Lastly, an Al layer is deposited, and the wirings of a gate electrode 4, a source electrode 9 and a drain electrode 10 are formed in isolated manner, thereby enabling to markably reduce the overlapping of the gate and the source regions, and the gate and the drain regions. |
