FORFARANDE ATT FRAMSTELLA TUNNA LEDANDE OCH HALVLEDANDE SKIKT I ENKRISTALLINT KISEL

摘要

A method for producing thin conductive or semiconductive layers embedded in silicon in the manufacture of structures for integrated circuits and the like. The invention is characterized by implanting metal atoms (14) in a silicon substrate (15) to a pre-determined nominal depth, and subsequently causing the implanted metal atoms to be redistributed, to form a conductive or a semiconductive layer (16), by heat-treating the silicon substrate (15).