| 摘要 |
PURPOSE:To suppress the fluctuation of the ratio of the capacity value between the capacitive elements due to the dispersion in processing by a method wherein a capacitive elements having different capacity value of prescribed ratio by means of an insulating film consisting of different crystalline faces in the case of an integrated circuit device having capacitive elements with small holes. CONSTITUTION:A field insulation film 2 electrically separates semiconductor elements and limits the formation-region for them in a semiconductor substrate 1. A small hole 3A is provided on the main plane on the memory cell-formation region of the semiconductor substrate 1, and all the side planes consist of (100) crystalline planes. A small hole 3C is provided on the main plane on the dummy cell-formation region of the semiconductor substrate 1, and all the side planes consist of (100) crystalline faces. Insulation films 4A and 4C are provided on the main upper plane of the semiconductor substrate 1 along the small holes 3A and 3C. The insulation film 4A constitutes a capacitive element for storing information, and the insulation film 4C constitutes a capacitive element for judging information. |
