| 摘要 |
PURPOSE:To improve the various characteristics of a film, a high speed film formation, reproducibility and uniformity of film quality by feeding an active seed made of silicon and halogen and an active seed made of an oxygen- containing compound, and making thermal energy act to chemically react film. CONSTITUTION:A polyethylene terephthalate film base 103 is placed on a supply base 102, and a film forming chamber 101 is evacuated. O2 gas is fed from a gas supply system 106 to an activating chamber 123, an active oxygen is formed by a microwave plasma generator 122, and fed through a guide tube 124 to the camber 101. Solid Si particles 114 are filled in the chamber 112, an active seed SiF2 is formed by blowing SiF4 from a guide tube 115 while heating in an electric furnace 113, and fed from a guide tube 116 into the cham ber 101. The pressure in the chamber 101 is held at 0.4 Torr, held at 210 deg.C by a thermal energy generator 117 to form an oxygen-containing amorphous deposited film. |
