| 摘要 |
PURPOSE:To enable the fine processing of a pattern in a submicron range, and to obtain the pattern having high sensitivity against AlKalpha and a SiKalpha rays, excellent resolution and a good antidry-etching property by using a specifically chlorinated polymethyl styrene as a resist material to the pattern. CONSTITUTION:In the fine processing method of the pattern in which the thin film of the resist having the sensitivity against X ray is formed on a substrate, and is selectively developed by irradiating X ray having the characteristics of a longer wavelength than that of K absorption edge of chlorine to the resist, the chlorinated polymethylstyrene having 10-30% a chlorination ratio, and 400,000-600,000mol.wt. is used as the resist material. A radiation source such as AlKalpha ray or SiKalpha ray is preferable to use as the X ray source. As these radiation sources are easy to be absorbed to the substance, said compd. is preferable to improve the contrast of the mask. The X ray sensitive resist having the high sensitivity against the AlKalpha ray and the SiKalpha ray, the excellent resolution and the dry-etching property obtd. by using said chlorinated methylstyrene, thereby enabling the fine processing in the submicron range suitable for working a semiconductor integrated circuit. |
