| 摘要 |
Semiconductor substrate materials, such as silicon, useful in the manufacture of electronic devices, such as integrated circuits, employing low temperature, i.e., below 1025 DEG C. processing cycles are provided with a 0.05 to 2.0 micron thick layer of polysilicon on the backside to improve gettering capabilities of defects, contaminants and impurities away from the active device region of the substrate. |
