| 摘要 |
PURPOSE:To reduce the degree of warping deformation of a substrate by forming at least one or more warp preventing thin films on the rear side of a substrate where plural head element pattern layers are formed. CONSTITUTION:An insulated layer 22 of Al2O3, SiO2, etc. is formed on the surface of a substrate 21 made of a metal, etc. by a sputtering process. Here an insulated layer 22a is formed on the rear side of the substrate 21 in the same way as the layer 22 to prevent the warping deformation owing to the compressed stress or the tension stress, etc. of the layer 22. Then a conventional lower magnetic pole layer, gap layer, insulated layer, coil conductor layer, upper magnetic pole layer, protecting layer, etc. are formed successively on the layer 22 by a sputtering process, a photolithography process, etc. to obtain plural head element pattern layers 23. In this case, another warp preventing thin film layer 23a is formed on the rear side of the substrate 21. In such a way, the warp preventing thin films are formed every time a thin film constituting a part of a thin film magnetic head is formed on the surface of the substrate 21. Thus the warping deformation of the substrate 21 can be reduced. |
