| 摘要 |
PURPOSE:To obtain single axial mode beams stably and simply by modulating the transmission characteristics of beams by utilizing the longitudinal electric- field effect of a quantum well layer. CONSTITUTION:A multiple quantum well active layer 3 in thickness of 0.9mum is grown on an N-type InP substrate 1, to which Sn is doped, by alternately superposing undoped InGaAs layers 75Angstrom 10, which lattice-match with InP, and undoped InAlAs layers 75Angstrom 11 at sixty periods in total, and a P-InP layer 5 to which Be is doped as a P-type impurity is grown on the layer 3, thus forming the so-called PIN structure. A Be-doped InGaAs layer 8 is grown on the layer 5 in succession, and a hole having a diameter of 0.5mm is bored to the layer 8 and a P side electrode Au:Zn:Ni 21. Accordingly, a field effect extraordinarily larger than the normal bulk structure is acquired. |
