| 摘要 |
PURPOSE:To integrate a highly sensitive light receiving element, by forming a p-n junction in a cap layer, whose band gap is small. CONSTITUTION:On a semi-insulating InP substrate 1, an n<+>-InP layer (light confining layer) 2, an n<-> InGaAsP layer (lightguide layer) 4, an n<+>-InP layer 5, an n-InGaAsP layer (light active layer) 6, an n<->-InP layer (light confining layer) 7 and an n<->-InGaAs layer (cap layer) 8 are formed. Then Zn is deeply diffused in a laser-part forming region 9, and a Zn diffused region 10 for laser is formed. The front of the diffusion reaches the light active layer 6. Zn is shallowly diffused in a light-receiving-part forming region 11, and a Zn diffused region 12 for the light receiving part is formed by the same way. A p-n junction is formed in the InGaAs layer 8. |
