| 摘要 |
PURPOSE:To enable uniform application of resist over the whole surface of a P-CVD film by removing micro particles deposited to its surface by a method wherein the second reaction chamber generation O2 plasma is provided in proximity to a vacuum reserve chamber in addition to the first reaction chamber to deposit the P-CVD film. CONSTITUTION:When a P-SiN film is deposited over an Si wafer in the first reaction chamber, a P-SiN film deposits also in the first reaction chamber 1 at the same time. For this purpose, deposits in the reaction chamber are removed by impressing high frequency power to the mixed gas of CF4 with O2 every time 25 Si wafers are treated. At this time, the pitch which binds graphite particles of a susceptor 4 is removed, and the graphite particles disperse. These particles remain in the reaction chamber and deposit to an Si wafer with the deposit of a P-SiN film at the time of gas exhaust and supply. The Si wafer with the deposit of a P-SiN film is then carried through a vacuum reserve chamber 3 and placed on a susceptor 6 in the second reaction chamber 3. Here, the graphite particles deposited on the P-SiN film are completely removed by impressing high frequency power to the mixed gas of O2 with CF4. |
