| 摘要 |
PURPOSE:To facilitate the control of deposited-film formation, by a method wherein a deposited film is formed over the substrate by introducing two specific compounds which are raw materials for forming the deposited film and an activation halogen chemically reacting with at least one of them to the film- forming space to form the deposited film over the substrate. CONSTITUTION:In the film-forming space to form a deposited film over a substrate, compounds serving as raw materials for forming the deposited film, which are expressed each by general formulas I and II [(m) indicates positive integers equal to or integral multiples of the valence numbers of R; (n) positive integers equal to or integral multiples of the valence numbers of M; M elements belonging to the II group of the periodic table; and R hydrogen H, halogen X, or hydrogen carbide radicals; besides, (a) indicates positive integers equal to or integral multiples of the valence numbers of B, (b) positive integers equal to or integral multiples of the valence numbers of A; X elements belonging to the VI group of the periodic table; and B hydrogen, halogen X, or hydrogen carbide radicals.] and an activation halogen chemically reacting with at least one of these compounds are introduced, thereby forming a deposited film over the substrate. |
