| 摘要 |
PURPOSE:To obtain a thin film transistor having high reliability and preferable switching characteristic by interposing a thin metal film on the junction between source and drain electrodes formed of transparent conductive film which mainly contains indium oxide and a semiconductor film, thereby forming a good semiconductor film without deterioration in quality. CONSTITUTION:A transparent conductive film which mainly contains indium oxide is formed on an insulating substrate 1, any of In-Sn, Al-Si, Mo is continuously laminated to form a thin metal film, and patterned by photoetching. Then, a semiconductor film (e.g., an amorphous Si film) is formed, and patterned by photoetching. A thin metal film 3 is removed by etching to form a source electrode 5 and drain and picture element electrode 6, and an insulating film 7 made of SiNx is formed. Further, aluminum or the like is formed on the film 7, patterned by photoetching to form a gate electrode 8. |
