| 摘要 |
PURPOSE:To reduce an optical band gap by including at least Ti in addition to Si and H. CONSTITUTION:A TiCl4 vapor supply source 10 is added in addition to a silane gas supply source 7 to an amorphous Si producing reaction chamber 1. The source 10 contains a bubbler 12 including TiCl4 solution 11 in a constant- temperature oven 13, flows H from a bomb 14 to the bubbler 12 to evaporate the TiCl4, and feeds it to the chamber 1. A glow discharge is generated by a DC power source 8 or a high frequency power source 9 in the chamber 1, and controls the quantity of the TiCl4 fed to the chamber 1 by the quantity of the H. However, when Ti/Si ratio in the produced film is 0.01 or less, an optical band cap does not almost decrease, and when 0.3 or more, a photoconductivity decreases. |
