| 摘要 |
<p>A power MOSFET reversing H-drive system having a first pair of N-channel and P-channel MOSFETs (Q1, Q2) connected in series with a load (LD1, LD2) to a power supply source (T 1) and a second like pair of N-channel and P-channel MOSFETs (Q3, Q4) connected in series with the load (LD1, LD2) to the source (T1), each pair having a resistance voltage divider (R1-R2, R5-R6) for providing the P-channel MOSFET (Q1, Q3) with a different voltage level gate signal from the logic level input signal by which the N-channel MOSFET (Q2, Q4) is gated, an overvoltage protector (Z1, Z2) allowing extension of the supply voltage (T1) range under which the system is operable, and the on-state resistances and the flyback current capability of the intrinsic diodes (ID1, ID4) being matched to the size of the load to be driven.</p> |
