| 摘要 |
PURPOSE:To enable to perform a doping on the part of the vertical angle or angles approximate to it, for which a doping can not be performed by the ion implanting method, by a method wherein PCl3 or PCl3 is added with a very small quantity of inert gas is added is introduced between paralleled flat plate electrodes whereon the material to be doped is placed, and electricity is discharged. CONSTITUTION:A (100) single crystal Si substrate 12 is placed on a paralleled flat type etching device 11, a quartz plate is used as a target material 13 for the purpose of preventing the contamination of the metal of a sample 12. Then, after the etching device 11 is evacuated, PCl3+Ar (3%) is introduced therein, the etching device 11 is evacuated while PCl3+Ar is being flowed in the same manner as a dry etching, and electricity is discharged for 8min when pressure is maintained constant. As a result, the PCl3 is decomposed and converted to P<+>, PCl<+>, PCl<+>2 and the like, they are accelerated by ion sheath voltage and implanted into the sample, and not only ions, but also they are implanted in the form of neutral grains. Subsequently, when an annealing is performed using a ramp annealing or an electric furnace, phosphorus is activated in Si. |
