| 摘要 |
PURPOSE:To provide the titled apparatus enabling the growth of a crystal having uniform composition, and furnished with a raw gas introducing port having a flat nozzle, and a table for holding a substrate crystal in the gas stream in a manner to direct the crystal growth plane parallel to the diffused plane of the raw gas stream. CONSTITUTION:The vapor-phase crystal growth apparatus is furnished with a raw gas distribution pipe 1, and the gas-outlet end of the pipe 1 is formed to have a flat cross-section. Accordingly, the raw material gas is discharged from the nozzle in a state diffused flatly along a certain plane. The crystal growth plane is placed in the gas stream parallel to the diffusing plane of the stream by a substrate-holding table 6 for holding the substrate crystal 8. The growth of a crystal having excellent uniformity of the composition in the crystal growth plane can be achieved by this apparatus. |
