INTEGRERAD KRETS MED STAPLADE MOSFELTEFFEKTTRANSISTORER OCH SETT ATT FRAMSTELLA DENSAMMA

摘要

An integrated circuit having two MOSFETs which are arranged vertically one above the other and which have a common gate can be produced without long-term high-temperature treatment and with reduced parasitic capacitance in the region of the source/drain and gate overlap if the common gate is aligned with the channels of the two MOSFETs and has essentially the same length as the channels or a slightly shorter length.