| 摘要 |
PURPOSE:To speed up photo response by a method wherein an n type layer is formed on an i-type layer via protection film having a window in the titled element of p-i-n structure. CONSTITUTION:A clear electrode constituting the first electrode film 2 is formed on a transparent substrate 1, and a photo sensor part 3 composed of a p type layer the first conductivity type layer 4, an i-type layer the intermediate layer 5, and an n type layer the second conductivity type layer 6 is formed thereon. In this case, the layer 6 is deposited on the layer 5 via window 8 of a protection film 7. This construction makes all the pairs of electrons and holes caused by photo irradiation to be absorbed to the electrode films 2 and 5 by impressed reverse bias voltage because the whole surface of the layer 6 on the electrode film 9 side is in contact with the film 9 and the size of contact of the layers 6 and 5 is smaller than that of the layers 5 and 4. Therefore, the speed of photo response increases. |
