| 摘要 |
PURPOSE:To prevent the infiltration of moisture to cracks by solder layers even when cracks generate at a part where stress is liable to concentrate, by a method wherein a layer of substance well-compatible with solder is formed on the surface of an insulation film at a part where stress is liable to concentrate, and a solder layer is formed thereon. CONSTITUTION:An aluminum wiring pattern 12 is led out of the IC on an Si substrate 10, and SiO2 insulation film 13 is formed except at an aperture section 130. An intermediate metallic layer 2 is formed over the whole surface by sputtering with Cr and Cu from below, and an electrode base 3 is formed by using the mask of a plating protection resist formed thereon and windowed for this base 3. Thereafter, the resist is removed, and a dry film (resist film) 5 is laminated over the whole surface and removed except in the electrode base 3 and in its periphery. Using it as the mask, the metallic layer 2 is etched. After removal of the dry film 5, a solder paste 40 is printed at the top of the electrode base 3, reflowed, and made to creep to the top 41 and the bottom of the electrode base 3 and to the top 42 of the outer edge 21 of the metallic layer 2, resulting in the formation of a solder bump electrode 4. |
