| 摘要 |
PURPOSE:To contrive to realize the semiconductor element of high cooling efficiency, by a method wherein a semiconductor element substrate polished to mirror surface and a cooling member polished to mirror surface are directly adhered to each other on polished surfaces under a clean atmosphere and made integral by heat treatment. CONSTITUTION:The surface of a thyristor substrate 11 on the cathode layer 13 side is mirror-polished to a surface roughness of 500Angstrom or less. The surface of an Si substrate 16 as the cooling member is provided with e.g. grooves 17 serving as the coolant path, and this surface is likewise mirror-polished. The two substrates finished in pre-treatments of degreasing and cleaning are adhered to each other on polished surfaces in a clean room under e.g. glass 1 and improved in adhesion strength by heating at 200-1,300 deg.C. If an oxidizing atmosphere is used in this heat treatment, or heating is carried out separately in an oxidizing atmosphere such as steam, then an oxide film 18 is formed along the adhesion surface of the substrates 11 and 16 to the inner wall of the groove 17 serving as the coolant path. |
