发明名称 PROCESS AND DEVICE FOR PREPARING POLYCRYSTALLINE SILICON
摘要 PURPOSE:To prevent deposition of silicon on a heating surface and to improve reaction efficiency by fluidizing particulate silicon powder heated at high temp. with gaseous H2 in a reaction vessel, and introducing an inorg. silane compd. into the fluidized bed. CONSTITUTION:An internal cylinder 3 is inserted concentrically to a cylindrical vessel main body 1. Specified particulate Si powder of high purity is charged from a charging port 12 and heated at a specified temp. with an electric heater 11. On one hand, gaseous H2 is fed from gas introducing ports 5, 8 through gas straightening device 4, 7 to fluidize the silicon, and a gaseous inorg. silane compd. is introduced simultaneously through an introducing pipe 9 into the fluidized bed of silicon in the internal cylinder 3 and dispersed in the fluidized bed. The gaseous inorg. silane compd. contacts with particulate silicon powder at high temp. while rising up through the fluidized bed depositing fresh silicon on the surface of silicon particles by reduction or thermal decomposition. The silicon particles are circulated in the vessel 1 through an annular section 14, and particulate silicon powder having increased particle size are discharged through a discharging pipe 6 of product.
申请公布号 JPS61183113(A) 申请公布日期 1986.08.15
申请号 JP19850024021 申请日期 1985.02.09
申请人 OSAKA TITANIUM SEIZO KK;KUNII DAIZO 发明人 KUNII DAIZO
分类号 C01B33/02;C01B33/035;C01B33/12 主分类号 C01B33/02
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