| 摘要 |
PURPOSE:To control easily the diameter of an ingot and to minimize the introduction of a rearrangement by pulling up a crystal to be pulled up through a liq. sealing agent through a circular hole and surrounding a pulled seed crystal with a heat retaining part. CONSTITUTION:An apparatus 1 for growing the crystal of a compound semiconductor is placed in a casing 9 in a crystal growing furnace. The seed crystal 2 and a grown GaAs crystal 6 are pulled up from a molten GaAs 4 in a crucible 8 through a circular hole 5 and molten B2O3 as the liq. sealing agent to regulate the diameter of the crystal 6. The pulled crystal 6 is passed through the heat retaining part 7 formed by a cylindrical body 10 provided with a heater 12 for resistance heating surrounding the pulled seed crystal 2. Since a sharp temp. gradient is hardly given to the crystal 6, chances to generate the rearrangement are reduced. |
