| 摘要 |
<p>PURPOSE:To obtain a TFT device having high reliability and a large area by forming an island, in which a surface protective film, a gate insulating film and a semiconductor thin-film are superposed on parts of source-drain electrodes, and shaping a gate electrode and an extending section between the surface protective film and the gate insulating film. CONSTITUTION:ITO12, 13, Cr 22, 23 and n<+> amorphous Si(a-Si) films 32, 33 in thickness of 500Angstrom or less are superposed onto a glass plate 1, thus forming drain-source electrodes 2, 3. An a-Si film 4 and a gate insulating film 5 are superposed, a gate electrode 6 and a wiring section for the gate electrode 6 are shaped, and the surface is coated with a protective insulating film 7. Laminated films 7, 5, 4, 33, 23 on the ITO13 for a picture element as one part of the source electrode 3 are removed to the same shape, and a TFT100 with the gate electrode 6 on the inside of an insular body 10 and a signal charge storage capacitance 110 of a gate electrode 6'-the films 5, 4, 33, 23-the electrode 13 between the electrode 6' in an adjacent line and the picture element electrode 13 are formed. According to the constitution, the resistance of drain wirings is lowered, and an area can be reduced, thus increasing withstanding voltage between the wirings, then also preventing a change with time of characteristics by the protective film.</p> |
