| 摘要 |
PURPOSE:To enable the projection of a mask pattern image onto the surface of a wafer while maintaining a definite relationship constantly by a method wherein a change in the focused state of the mask pattern image on its surface of the wafer due to an error in form or dimensions of a mask or the wafer is adjusted by varying a wavelength of irradiation from an irradiation system. CONSTITUTION:A wavelength of oscillation from an excimalaser 1 is varied within the photosensitive region of a wafer 6 by find-adjusting a wavelength varying means 8 on the basis of a value calculated by an imaging magnification detecting means 7. Then, treatment process is applied, the wafer 6 whereon a part of the original image of a mask 4 is recorded is disposed again in the same position as in the preceding time, and a mask pattern image different from the one formed in the preceding time is projected onto the surface of the wafer 6 by a prescribed imaging magnification. On the occasion, the weavelength of oscillation of the irradiation system is varied for adjustment so that the pattern image of a new mask 4 recorded on a mask plane has a prescribed imaging relationship with the projected image of an alignment mark, for instance, on the new mask plane. |
