| 摘要 |
PURPOSE:To make it possible to form the insulative film whose dielectric strength and resistivity are large, by irradiating light in the mixed atmosphere of the source gas containing V group element and the source gas containing nitrogen, and forming the insulative film of nitride containing V group element on the crystal of the chemical compound semiconductor containing V group element. CONSTITUTION:On the base 15, the chemical compound semiconductor substrate 5 is placed, whose surface is subjected to etching by irradiating the laser beam to a very small amount of etching gas introduced through the material gas input port 10, and oxide of the chemical compound semiconductor is eliminated. After etching gas is exhausted, gas hydride as the source gas containing V group element and ammonium gas as the source gas containing nitrogen are introduced into the reaction vessel 4, and by irradiating the laser beam through the glass window 3, the insulative film of nitride containing V group element is deposited on the chemical compound semiconductor substrate 5. |
