| 摘要 |
PURPOSE:To form a ohmic electrode having excellent heat resistivity and low contact resistance with good reproducibility by forming an electrode pattern of high melting point metal on a lower base layer and forming a semiconductor layer with high doping concentration which is to be in the ohmic contact with electrode pattern on such lower base layer. CONSTITUTION:As a lower base layer 1, an active layer 1b is formed by executing selective ion implantation of Si, etc. to a part of the GaAs substrate 1a and then activating the ion-implanted region. A high melting point metal is deposited on the lower basic layer 1, it is then patterned and an electron pattern 2 where a part of active layer 1b is extending on the part of substrate 1a is formed. Next, a mask 4 consisting of SiO2, etc. is formed, a semiconductor layer 3 with high doping concentration is selectively grown to a part of the active layer 1b and electrode pattern 2 through a window 5 of mask 4, thereby forming an ohmic contact between the electrode pattern 2 and the semiconductor layer 3. |
