| 摘要 |
PURPOSE:To suppress contraction in crystallization, by implanting ions in the amorphous layer of the mixed body of a metal and a semiconductor, and heating and crystallizing the amorphous layer. CONSTITUTION:A poly Si layer 2 is deposited on an Si substrate 1. An Mo-Si amorphous layer is deposited on the layer 2 by a sputtering method. Then Ar<+> is implanted in the entire surface. heat treatment is performed, and the Mo-Si amorphous layer is made to be multiple crystals, and an MoSi2 layer 3A' is obtained. In this method, stress between the layer 3A' and the layer 2 in the heat treatment is alleviated, and poor adhesion and separation between both layers are prevented. |
