| 摘要 |
PURPOSE:To increase an avalanche multiplication factor, and to enable operation having high speed, high sensitivity, low dark currents and low noises by fitting a connecting terminal for applying external voltage between an optical absorption region and an avalanche multiplication region. CONSTITUTION:A high carrier concentration layer 4 is formed so that external voltage can each be applied independently to an optical absorption layer 6 and an avalanche multiplication layer 2 through an electrode 10 as an external connecting terminal. An anit-electron barrier layer 5 constitutes a partition wall for preventing an injection to the optical absorption layer 6 of electrons as the majority carriers of the high carrier concentration layer because the high carrier concentration layer 4 is formed. An electric field applied to the optical absorption layer 6 and a hetero-junction interface is controlled by a voltage source 12 pushed between electrodes 9 and 10, and an electric field applied to the avalanche multiplication layer 2 is controlled by a voltage source 13 pushed between electrodes 8 and 10. Outputs proportional to optical signals are extracted as both end voltage of a resistor 14 connected in series with the voltage source 13. |
