| 摘要 |
PURPOSE:To enable an inner current pinch region and a light-emitting region to form, by liquid-phase epitaxial gowth process at one time and to dissolve instability of an oscillation mode based on discrepancy of mark alignment by a method wherein a stripe for current pinch is provided to a convex section of a substrate. CONSTITUTION:A double striped groove 12 and a groove 16 on a top of mesa- type convex section are formed on a semiconductor substrate 10, and then the primary clad layer 11, a current pinch layer 12, an active layer 13, the secondary clad layer 14 and a cap layer 15 are formed in turns. The growth layer thickness of the clad layer 11 is thin at a flat section of a substrate 10 and a flat section on a top of a convex section and is thick at a slant of the convex section and inside the groove 16 because of facial orientation dependability of growth speed. After growth of the clad layer 11, the clad layer 11 is eroded remaining the clad layer 11 at a slant of the convex section and the top groove section, then the melt back face reaches to the substrate face when the temp. of growth solution is rised up. Consequently, when epitaxial growth is performed to the current pinch layer 12, the current pinch layer 12 is grown from the both edge of the groove 16 without accumulation on the groove 16.
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