| 摘要 |
<p>PURPOSE:To obtain a substrate, which radiates heat efficiently and has excellent electric insulation even in a high humidity environment, by providing a metal substrate having good heat conductivity, an electric insulating inorganic material layer, which is formed by vapor growth method on the metal substrate and a thin insulating resin layer, which is applied on the inorganic material layer. CONSTITUTION:An electric insulating inorganic material layer 2 is formed on the surface of a metal substrate 1 by a vapor growth method. A thin insulating resin layer 3 is applied on the layer 2. By coating the inorganic material layer 2 by the thin insulating resin layer 3, the recess parts of the irregularities on the inorganic material layer 2 are filled, and the irregular thicknesses of the insulating layer are made few. Intrusion of moisture and conducting ions through the thin parts of the inorganic material layer 2 and intrusion of moisture and conducting ions through crystal grains of the inorganic material layer, which is grown in vapor phase, are blocked by the layer 3 as a blocking layer. Thus deterioration of insulating property can be prevented even if the substrate for the semiconductor device is placed in a high humidity environment.</p> |
