| 摘要 |
PURPOSE:To form a resistor having a small occupying area by superposing the first and second polycrystalline silicon films through an insulating film, and connecting them by a side wall. CONSTITUTION:The first polycrystalline silicon film 12 of high resistivity having a slender pattern is formed on the first insulating film 22 formed on a semiconductor substrate, and the surface is coated with the second insulating film 13. One side wall 14 of the film 12 is exposed, and the second polycrystalline silicon film 15 of high resistivity having a slender pattern connected with the side wall region 15 is formed. The third insulating film 16 is formed on the surface of the film 15, and an electrode 17 is formed on the film 16. Thus, since the second resistor L2 can be superposed on a resistor L1, the occupying area of the resistor can be reduced.
|
