| 摘要 |
PURPOSE:To prevent the oxidation of a recording layer resulting from air and a substrate and to obtain the title medium capable of being used for a long period by forming the recording layer on the substrate, and providing a silicon nitride layer to protect the recording layer. CONSTITUTION:A recording layer 2 of Te or a chalcogenide material contg. Te is formed on a substrate 1 consisting of glass, etc., and the films of antioxidant layers 3a and 3b using a silicon nitride film are formed on the upper and the lower surface of the layer 2. To produce the information recording medium, Si is firstly sputtered in a methane atmosphere on the substrate 1 from an Si target to form the film of the silicon nitride layer 3a, and then the film of the recording layer 2 is laminated by sputtering Te on the silicon nitride layer 3a from the Te target. Moreover, the film of the silicon nitride layer 3b is likewise formed on the recording layer 2. The thickness of the silicon nitride layers 3a and 3b is regulated to about 1000Angstrom , and the thickness of the recording layer 2 is controlled to 500Angstrom . The silicon nitride films 3a and 3b act very efficiently as the antioxidant layer. |
