| 摘要 |
PURPOSE:To insulate and separate two or more semiconductor layers by preventing a warpage by forming a plurality of stripe grooves of narrow openings on a dielectric insulating film of one main surface of a semiconductor crystal substrate, growing the crystal, and heat treating to alter the openings to insulators. CONSTITUTION:An oxide film 2 is formed on the surface of a single crystal silicon substrate 1, and a plurality of stripe grooves having narrow openings are formed on the film. Then, with the openings of the film 2 as nuclide of crystal grown the crystal is epitaxially grown. Further, the epitaxial crystal growth is continued, the crystal grown laterally from the adjacent opening is integrated, and the film is buried in the single crystal in the structure. Then, the semiconductor substrate and the epitaxial layer are electrically insulated and separated in an isolating step. As a result, the substrate 1 and the epitaxial layer 3 are insulated and separated by an insulating layer 4. |
