| 摘要 |
PURPOSE:To improve the adhesive force of a photoconductive layer to a substrate by providing a silicide layer alloyed with amorphous silicon between the conductive surface of the substrate and the photoconductive layer. CONSTITUTION:The silicide layer having about 10-1,000Angstrom thickness is provided on the conductive surface of the cylindrical stainless steel base 1 of which the surface is worked with good accuracy. The silicide layer 2 is formed by alloying Ti, Ta, Mo, W, Co, Pd, Pt with amorphous silicon (a-Si). Said layer has the high adhesiveness to the substrate 1 and is dense and highly stable in terms of material quality. The photoconductive layer 3 provided on the silicide layer 2 consists essentially of the amorphous silicon to about 20mum film thickness and is added with, for example, a specified ratio of oxygen and nitrogen. |
