发明名称 FORMATION OF FINE PATTERN
摘要 PURPOSE:To make it possible to form easily the fine pattern by applying the glass film capable of rotation application to the film on which the pattern generation is performed by the focused ion beam. CONSTITUTION:In the forming method of the fine pattern applying the focused ion beam, the pattern is directly inscribed on the thin glass film 7 capable of rotation application by the focused ion beam 2. The pattern inscribed on the glass film 7 is developed by the gas plasma. Finally, the film 4 to be manufactured is applied with etching through the mask which is the pattern formed on the thin glass film 7 capable of rotation application, and the desired pattern is formed on the film 4. The pattern generation on the thin glass film capable of rotation application makes the formation of the fine pattern easy.
申请公布号 JPS61166025(A) 申请公布日期 1986.07.26
申请号 JP19850007026 申请日期 1985.01.17
申请人 MITSUBISHI ELECTRIC CORP 发明人 SHIBANO TERUO;MORIMOTO HIROAKI;TSUKAMOTO KATSUHIRO
分类号 H01L21/027;H01L21/30;(IPC1-7):H01L21/30 主分类号 H01L21/027
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