| 摘要 |
PURPOSE:To produce an MIS type semiconductor integrated circuit device with radiation resistance by a method wherein element isolating regions are provided on peripheral part of active region to restrain the fluctuation of parasitic MOS characteristics due to radioative irradiation. CONSTITUTION:After forming of selective oxide films 42, a masking material 44 such as photoresist etc. is patterned in an active region by means of removing peripheral part. Then the peripheral part of active region is ion-implanted with impurity with the same conductive type as that of substrate to form element isolating regions (high concentration region) 45. After removing the masking material 44, a gate electrode 46 is patterned and then materials 47 such as aluminium etc. to be ion implanting masks are patterned to be left on the selective oxide films 42 and the element isolating regions 45 forming source-drain regions by means of ion implantation. At this time, the source-drain regions 48 and the element isolating regions 45 are brought into contact with each other. Finally the masking material 44 is removed. |
