| 摘要 |
PURPOSE:To prevent an augmentation in the threshold current, a drop in the luminous efficiency, a reduction in the internal quantum efficiency and so forth by a method wherein the contact layers are constituted of plural In1-xGaxAs1-yPy layers, whose lattice constants are alternatively different. CONSTITUTION:As the lattice constants of P-type In1-xGaxAs1-yPy contact layers (0<=x<=1, 0<=y<=1) 6a, 6b, 6c and 6d are made to alternatively change slightly in an extent of + or -0.05% to the lattice constant of an InP, the respective interfaces with a lattice mismatching strain are formed between the contact layers 6a and 6b, between the contact layers 6b and 6c and between the contact layers 6c and 6d. As a result, at the time of a heat treatment to be performed for making a P-type electrode Ep ohmic-connect to the contact layers, Au atoms, which intrude in the contact layers from the P-type electrode Ep and are dif fused toward a luminous region 103, and Au atoms, which are diffused in the contact layers from the P-type electrode Ep during the time the semiconductor light-emitting element is in operation, are captured by the lattice mismatching strain parts and the Au atoms to reach the luminous region 103 become almost nil.
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