| 摘要 |
<p>PURPOSE:To prevent an adverse effect on element characteristics of inter-surface ununiformity appearing on the upper surface of a Te-added first layer by forming a layer, to which Te is not added, a conduction type thereof is equal to the first layer and which does not contain Te, onto the first layer. CONSTITUTION:A Te-added AlxGa1-xAs current confinement layer 12 as a first layer, an AlxGa1-xAs buffer layer 13, to which Te is not added, and a GaAs surface protective layer 14 are grown continuously on a P-type GaAs substrate 11. That is, the layer 13, which has the same crystal composition as the layer 12 and to which Te is not added, is inserted between the layer 12 and the layer 14. The lamellar inter-surface ununiformity of the surface of the layer 12 is relaxed by the effect of the presence of the layer 13, and the layer 14 equally grows on the whole surface of the substrate, thus obtaining a specular growth wafer. Since the layer 14 grows on the whole surface, second growth shaped on the layer 14 is also made uniform extending over the whole surface of the wafer.</p> |
