| 摘要 |
1,135,607. Semi-conductor devices. TRW SEMICONDUCTORS Inc. 15 March, 1966 [18 Aug., 1965], No. 11327/66. Heading H1K. A semi-conductor device comprises an insulating header provided with at least two conductive contact regions on one side to which ribbon leads are connected, a semi-conductor body mounted on one control region and connected with a fine wire to the other, and a solid plastics cap moulded over the upper portion of the header. The lower face (12) of a beryllia disc (10) is metallized (13), e.g. by chemi-plating, and metallized regions (15 to 18) are formed on the upper face (11) of the disc (10). A copper stud (20) is brazed to the metallized layer (13) on the lower face of the disc, Fig. 2 (not shown), or alternatively a stud may be formed integrally with the disc (10). As shown, Fig. 3, four conductive ribbon leads 21 to 24 are brazed to metallized regions 15 to 18 respectively. A silicon NPN planar transistor is bonded to region 15, its base region is connected to ribbon lead 23 by fine wire 27, and its emitter is connected to ribbon leads 22, 24 by fine wires 26, 28. Wires 26 to 28 may be thermocompression bonded to the transistor and welded to the ribbon leads. A layer (30) of silicone resin or other polymer is brushed on to the top surface of the disc (10) to provide an elastic buffer coating, Fig. 4 (not shown), and the device is then loaded into a mould and a plastics cap (35) e.g. of a silicone moulding compound is transfer moulded over the top and sides of the disc (10), Fig. 5 (not shown). The stud (20) may be omitted and the lower face of the disc (10) fixed directly to a heatconductive surface. A diode may be similarly encapsulated using only two ribbon leads. |
