发明名称 CVD APPARATUS
摘要 PURPOSE:To form a CVD film having less particle by providing a means discharging an inert gas between a reactor core pipe and a main valve. CONSTITUTION:Before introducing a wafer into a reactor core pipe 1, a main valve of an exhaust pipe 5 is closed and a stop valve 8 of an introduction pipe 7 for an inert gas is opened to blow the inert gas from an exhaust side. Thereby the infiltration of the atmosphere into the reactor core pipe 1 is prevented to suppress the reaction of the nonreacted gas and also the particle floating in the inside of the reactor core pipe 1 is purged to the outside of the reactor core pipe 1. By this mechanism, when the wafer is introduced into the reactor core pipe 1, the particle stuck thereon can be reduced and the yield of the wafer can be improved.
申请公布号 JPS61163279(A) 申请公布日期 1986.07.23
申请号 JP19850001627 申请日期 1985.01.09
申请人 NEC CORP 发明人 MATSUWAKA ATSUJI
分类号 C23C16/48;C23C16/44;C23C16/455;H01L21/205;H01L21/31 主分类号 C23C16/48
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