| 摘要 |
PURPOSE:To obtain a sense amplifier circuit in which high speed operation and noise resisting property are made compatible by combining MISFET (insulat ing gate type field effect transistor). CONSTITUTION:Just before starting amplification, an MISFET3 is cut off, and MISFETs 4, 5 and 8, 9 are in conduction, and MISFETs 13, 14 and 6, 7 are cut off. At the time of amplification, MISFETs 4, 5 are cut off and the potential of a clock terminal 19 is changed, and MISFET3 is made conductive. Then, potential difference which is in output terminals 17 and 18 at first is amplified. However, one potential after amplification becomes nearly VSS, and if threshold voltage of MOSFETs 11 and 12 is VT, another potential becomes VDD-VT. At the time of amplification, only floating capacity with output terminals 17 and 18 has relevance,and high speed operation can be obtained by making the floating capacity small.
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