| 摘要 |
A copper bonding pad structure for the tape automated bonding of semiconductor devices includes a palladium anti-oxidation layer 30 over the exposed copper. The palladium layer has a thickness in the range from about 80 to 300 Angstroms, and is particularly suitable for use since it has a very low diffusivity into copper, even at elevated temperatures. In the preferred embodiment, the copper bonding pad structure comprises an aluminium layer applied directly over an aluminium metallization pad 12, a nickel layer 22 applied directly over the aluminium layer, and an overlying copper layer 24. The nickel layer inhibits the migration of copper into the aluminium, while the copper layer with palladium may be bonded directly to copper bump tape. In an alternative embodiment, a copper bump is formed directly over the copper bonding pad, which allows for bonding to a flat copper bonding tape. <IMAGE> |
